???????????????????????????????? SSF5N60F ? main product characteristics: ? silikron semiconductor co.,ltd. 2011.08.19 version : 1.0 page 1 of 8 www.silikron.com ? v dss 600v r ds (on) 2ohm(typ.) i d 4a marking and pin assignment ? ? ? ? features and benefits: schematic diagram ? to220f ? ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature description: it utilizes the latest trench proc essing techniques to achieve the high cell density and reduces the on-resistance with high repetitive aval anche rating. these features combine to make this design an extremely efficient and reliable device for use in power switch ing application and a wide vari ety of other applications ? absolute max rating: symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 4 i d @ tc = 100c continuous drain current, v gs @ 10v 2.5 i dm pulsed drain current 16 a power dissipation 33 w p d @tc = 25c linear derating factor 0.26 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=27.5mh 220 mj i as avalanche current @ l=27.5mh 4 a t j t stg operating junction and storage te mperature range -55 to + 150 c
???????????????????????????????? SSF5N60F thermal resistance symbol characterizes typ. max. units r jc junction-to-case ? 3.79 /w junction-to-ambient (t 10s) ? 62 /w r ja junction-to-ambient (pcb mounted, steady-state) ? 40 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 ? ? v v gs = 0v, id = 250 a ? 2 2.1 v gs =10v,i d = 2a r ds(on) static drain-to-source on-resistance ? 4.63 ? ? t j = 125 2 ? 4 v ds = v gs , i d = 250 a v gs(th) gate threshold voltage ? 2.28 ? v t j = 125 ? ? 1 v ds = 600v,v gs = 0v i dss drain-to-source leakage current ? ? 50 a t j = 125 ? ? ? ? 100 v gs =30v i gss gate-to-source forward leakage -100 ? ? ? ? na v gs = -30v q g total gate charge ? ? 17.8 ? q gs gate-to-source charge ? ? 3.7 ? q gd gate-to-drain("miller") charge ? ? 7.1 ? nc i d = 4a, v ds =480v, v gs = 10v t d(on) turn-on delay time ? ? 10.9 ? t r rise time ? ? 16.3 ? t d(off) turn-off delay time ? ? 40.0 ? t f fall time ? ? 31.8 ? ns v gs =10v, vds=300v, r l =75 ? , r gen =25 ? id=4a c iss input capacitance ? ? 537 ? c oss output capacitance ? ? 59 ? c rss reverse transfer capacitance ? ? 6 ? pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) ? ? 4 a i sm pulsed source current (body diode) ? ? 16 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage ? 0.87 1.3 v i s =4a, v gs =0v t rr reverse recovery time ? 311.6 ? ns q rr reverse recovery charge ? 2476 ? nc t j = 25c, i f =4a, di/dt = 100a/ s ? ? silikron semiconductor co.,ltd. 2011.08.19 version : 1.0 page 2 of 8 www.silikron.com ?
???????????????????????????????? SSF5N60F test circuits and waveforms ? silikron semiconductor co.,ltd. 2011.08.19 version : 1.0 page 3 of 8 www.silikron.com ? switch waveforms: notes : ? the maximum current rating is limited by bond-wires. repetitive rating; pulse width limit ed by max. junction temperature. the power dissipation pd is based on max. junction temperature, using ju nction-to-case thermal resistance. the value of r ja is measured with the devic e mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedenc e which is measured with the device mounted to a large heatsink, assumi ng a maximum junction temperature of t j(max) =150c. the maximum current rating is limited by bond-wires.
???????????????????????????????? SSF5N60F typical electrical and thermal characteristics ? silikron semiconductor co.,ltd. 2011.08.19 version : 1.0 page 4 of 8 www.silikron.com ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? figure 2. gate ? to ? source ? cut \ off ? voltage figure 1: typical output characteristics ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature ? ? ?
???????????????????????????????? SSF5N60F typical electrical and thermal characteristics ? ? silikron semiconductor co.,ltd. 2011.08.19 version : 1.0 page 5 of 8 www.silikron.com ? ? ? ? ? ? ? ? ? figure 5. maximum drain current vs. case temperature figure 6.typical capacitance vs. drain-to-source voltage ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? figure7. maximum effective transient thermal impedance, junction-to-case ? ?
???????????????????????????????? SSF5N60F mechanical data min nom max min nom max a 9.960 10.160 10.360 0.392 0.400 0.408 a1 0.276 0.000 0.000 a2 3.080 3.180 3.280 0.121 0.125 0.129 a3 9.260 9.460 9.660 0.365 0.372 0.380 b1 15.670 15.870 16.070 0.617 0.625 0.633 b2 4.500 4.700 4.900 0.177 0.185 0.193 b3 6.480 6.680 6.880 0.255 0.263 0.271 c 3.200 3.300 3.400 0.126 0.130 0.134 c1 15.600 15.800 16.000 0.614 0.622 0.630 c2 9.550 9.750 9.950 0.376 0.384 0.392 d d1 - - 1.470 - - 0.058 d2 0.700 0.800 0.900 0.028 0.031 0.035 d3 0.250 0.350 0.450 0.010 0.014 0.018 e 2.340 2.540 2.740 0.092 0.100 0.108 e1 e2 e3 0.450 0.500 0.600 0.018 0.020 0.024 e4 2.560 2.760 2.960 0.101 0.109 0.117 symbol dimension in millimeters dimension in inches 7.000 2.54 (typ) 0.700 1.0*45 0 30 0 1.00 (typ) 0.028 1.0*45 0 30 0 to220f package ? ? ? silikron semiconductor co.,ltd. 2011.08.19 version : 1.0 page 6 of 8 www.silikron.com ?
???????????????????????????????? SSF5N60F ? silikron semiconductor co.,ltd. 2011.08.19 version : 1.0 page 7 of 8 www.silikron.com ? ordering and marking information device marking: SSF5N60F package (available) to220f operating temperature range c : -55 to 150 oc devices per unit packag e type units/tu be tubes/inner box units/inner box inner boxes/carton box units/carton box to220f 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
???????????????????????????????? SSF5N60F ? silikron semiconductor co.,ltd. 2011.08.19 version : 1.0 page 8 of 8 www.silikron.com ? attention: any and all silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reason ably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you bef ore using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures t hat result from using product s at values that exceed, even momentarily, rated values (such as maximum rating s, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contai ned herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functi ons of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. silikron semiconductor co.,ltd. strives to supply high- quality high-reliability prod ucts. however, any and all semiconductor products fail with some probability. it is possibl e that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt sa fety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant desig n, and structural design. in the event that any or all silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellect ual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing e quipment, refer to the "deliv ery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. 11a, 428 xinglong street, suzhou industrial park, p.r.china tel: (86-512) 62560688 fax: (86-512) 65160705 e-mail: sales@silikron.com
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